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| SPP77N06S2-12 SPB77N06S2-12 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 12 80 P- TO220 -3-1 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated Type SPP77N06S2-12 SPB77N06S2-12 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6029 Q67060-S6030 Marking 2N0612 2N0612 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current TC=25C Value 80 56 Unit A ID Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 280 16 6 20 158 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=77A, V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 1) Reverse diode dv/dt IS=77A, V DS=44V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 0.63 max. 0.95 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=93A Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25C V DS=55V, VGS=0V, Tj=125C A 0.01 1 1 9.8 1 100 100 12 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=38A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =77A, VGS =0 to 10V VDD =44V, ID =77A Symbol Conditions min. Values typ. 54 1770 460 120 14 27 34 26 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =56A VGS =0V, VDS =25V, f=1MHz 27 - S 2350 pF 610 180 20 40 50 39 ns VDD =30V, VGS =10V, ID =77A, RG =6.2 - 9 18 45 5.9 12 28 60 - nC V(plateau) VDD =44V, ID =77A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =77A VR =30V, IF =lS , diF /dt=100A/s IS TC=25C - 1 45 64 80 320 1.3 60 80 A V ns nC Page 3 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 1 Power dissipation Ptot = f (TC) parameter: VGS 6 V 170 SPP77N06S2-12 2 Drain current ID = f (T C) parameter: VGS 10 V 90 SPP77N06S2-12 W 140 A 70 120 P tot 60 100 80 60 40 20 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPP77N06S2-12 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP77N06S2-12 K/W A t = 7.6s p 10 s 10 0 DS /I D 10 ID = V 2 DS (on ) Z thJC 100 s 10 -1 R D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 10 -3 0.02 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s 190 SPP77N06S2-12 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 38 SPP77N06S2-12 Ptot = 158W h g VGS [V] a b 4.5 4.8 A 160 140 m 32 c d e f R DS(on) c 5.5 6.0 6.5 7.0 8.0 10.0 28 24 20 16 fd ID 120 100 80 d e e f g h g 60 40 20 b c 12 8 4 a VGS [V] = c 5.5 d 6.0 e 6.5 f 7.0 g h 8.0 10.0 h 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 5 0 20 40 60 80 100 120 A 150 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s 160 8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs 60 S A 50 120 45 ID 100 g fs 40 35 80 30 25 60 20 40 15 10 20 5 0 0 1 2 3 4 5 7 V VGS 0 0 10 20 30 40 50 60 70 A 90 ID Page 5 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 38 A, VGS = 10 V 40 SPP77N06S2-12 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 4 m 32 V 465 A V GS(th) 3 R DS(on) 28 24 20 16 12 8 4 0 -60 98% typ 2.5 93 A 2 1.5 1 0.5 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s 10 3 SPP77N06S2-12 A pF Ciss C IF 10 3 10 2 Coss 10 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 10 5 10 15 20 0 Crss 10 2 0 V VDS 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 13 Typ. avalanche energy E AS = f (T j) par.: I D=77A, VDD = 25 V, RGS = 25 mJ 300 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP77N06S2-12 V 240 220 12 E AS 200 180 160 140 120 100 80 60 40 20 0 25 45 65 85 105 125 145 VGS 0,2 VDS max 10 0,8 VDS max 8 6 4 2 C 185 Tj 0 0 10 20 30 40 50 nC 70 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP77N06S2-12 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-05-09 SPP77N06S2-12 SPB77N06S2-12 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP77N06S2-12 and BSPB77N06S2-12, for simplicity the device is referred to by the term SPP77N06S2-12 and SPB77N06S2-12 throughout this documentation. Page 8 2003-05-09 |
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